The inset shows a FFT pattern from the region of interest (dotted frame) in the amorphous layer.
Consequently, the stress intensity drops in the amorphous layer.
As a thin amorphous layer is located just beneath the tool edge, a local deformation (LD1) is initiated from the amorphous layer, as shown in Fig. 11a.
In addition, the subsurface damages beneath the machined surface are attenuated by the amorphous layer.
The amorphous layer located at the trench bottom surface is constructed of gallium oxide.
The chip is formed by extrusion independent of the amorphous layer thickness.
As the amorphous layer becomes thicker, the atomic shear is weakened, especially in region III.
The larger values of R were not associated with the increase of the amorphous layer thickness.
There was no DSC response that could be attributed to the amorphous layer.
On the other hand, with further increase of amorphous layer thickness, the amorphous layers cannot keep the crystallization state and change back into the amorphous state, which destructs epitaxial growth structure and decreases the crystallization integrity of the nanomultilayer.
