The only difference is inclusion of a threshold voltage.
There is no current below a specific threshold voltage V t at lower temperatures; however, charge carriers can tunnel from one dot to another when the charging energy of the device can overcome the thermal energy, leading to a power law dependence while above V t: I ∞ (V/V t − 1) ζ [49].
When the gate bias is below the threshold voltage, a small amount of electrons are diffused into the channel, due to large barrier between MoS2 and source electrode.
In another experiment by Porath and colleagues, the voltage applied across the DNA was about 4 V between two platinum nanoelectrodes, and the resulting current did not surpass 1 pA below the threshold voltage of a few volts.
For input voltages below the threshold voltage for field emission, the nanotube loop is effectively open and the circuit response is consistent with a discharging capacitor.
However, since the read region of the voltage is usually below the threshold voltage, only resistance drift is studied in this article.
In qualitative agreement with the experiments the I D - V G-traces exhibit below the threshold voltage thermally activated transport at small drain voltages.
The subthreshold current much below the threshold voltage, which is due to the reflections from the barrier of the near-midgap state, decreases exponentially.
However, the translocation events gradually disappeared when the voltage bias was below −600 mV, which suggested that PS microspheres across chemically modified nanopores needed a higher threshold voltage.
Therefore, the traps do not discharge significantly until the gate bias is below threshold voltage (V th), so the carrier density in the channel is reduced.
