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For devices with a short gate length (L<90 nm) and being fabricated using the low threshold voltage (low-VT) technology, both the temperature dependencies of threshold voltage and DIBL are different to the standard-VT and high-VT ones.
The design of high-Q resonators such as Xylophone Bar Resonators (XBRs) capable of being fabricated using Micro-Electro-Mechanical Systems (MEMS) professes is of considerable interest in light of the widespread and rapidly growing use of systems dependent on their availability and performance.
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