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Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions.
Design maps are constructed to show the regimes of behaviour over a broad range of loading intensity, sandwich panel geometry and material strength.
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This approach was based on the Arrhenius relation of τc vs. 1/T determined from motionally narrowed ESR spectra and on the assumption that this behaviour prevails over a broader temperature range at temperatures generally greater than Tg of a given polymer.
Sedentary behaviour is a broad construct encompassing a range of behaviours [ 2].
G′ vs. G″ plots indicated a solid-like elastic melt behaviour for LN3 whereas presence of ODT over a broad temperature range was observed for LN4.
All the materials possess the self-assembling behaviour, specifically the paraelectric orthogonal smectic A*, the ferroelectric tilted smectic C* and antiferroelectric tilted smectic CA* phases over a broad temperature range down to room temperature.
The oxygen permeability varied over a broad range.
Additionally, interpenetrating blends formed over a broad compositional range.
Beyond the wall, tall palms leaned over a broad green.
All samples exhibited a microphase separated morphology over a broad temperature range.
Over a broad temperature range fracture preferentially occurred along grain boundaries.
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