Sentence examples for behaviour of faceted structures from inspiring English sources
The coarsening behaviour of faceted structures with increasing fluence is explained in light of Hauffe's mechanism based on reflection of primary ions [32].
We now go on to explain the coarsening behaviour of faceted structures (as is evident from Table 1) at higher fluences (>5 × 1017 ions cm-2) using the mechanism proposed by Hauffe [32].
The formation of faceted structures and their coarsening behaviour discussed previously are beyond the scope of linear stability analysis of B-H theory because of the presence of ion beam shadowing and possible slope-dependent non-linear effect.
Another observable tendency in the evolution of the structures is the formation of faceted structures with a distinct angle towards the global surface normal.
A major reason for this is the lack of available experimental data on the formation of faceted structures using low-energy ions.
To understand this behavior, we calculated the average aspect ratio of the faceted structures (i.e., height/lateral dimension) along x and y directions which turned out to be 0.25 and 0.24, respectively.
Thus, the observed absence of change in surface reflectance, due to different directions of incident light, can be attributed to the comparable aspect ratio of the faceted structures along x and y directions.
Thus, there is a room to look for controlled synthesis of self-organized faceted structures on silicon surface using similar ion energies.
For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 1017 ions cm-2) which undergo a transition to faceted structures at a higher fluence of 5 × 1017 ions cm-2.
However, applicability of this very approach is yet to be explored for low-energy (hundreds of electron volts) ion-induced transition from ripples to faceted structures under continuous ion bombardment.
