Sentence examples for behavior of the semiconductor from inspiring English sources

But, the behavior of the semiconductor surfaces under the acoustic cavitation remains a little studied.

The reliability of the converters is determined by the thermal behavior of the semiconductor devices which equally affects the robustness and cost of the converters.

When designing a gate driver, it is always important to understand both the static and dynamic behavior of the semiconductor devices used as it aids the effectiveness of the design for a given gate driver system.

Using the above results for the matrix element of the dipole moment of the transition D1,0 (formulas (21) and (22)), we can elucidate the behavior of the semiconductor quasi-zero-dimensional systems on absorbing the energy of the electromagnetic field in the frequency region corresponding to the energies of the quantum-confined states in the QD En,l (8).

The study of optical absorption is important to understand the behavior of semiconductor nanocrystals since the fundamental property of semiconductors is the band gap that is the energy separation between the filled valence band and the empty conduction band.

This shows that two distinct regions of slope exist, typical of the behavior of doped semiconductors, with the region on the right related to the thermal activation of extrinsic dopant charge carriers and the region on the left related to intrinsic conductivity.

This paper reports results on investigations of the dynamical behavior of a semiconductor laser with quantum dots active medium under the influence of a feedback from double external cavity.

The semiconductor behavior of the ceramics was confirmed from the temperature dependent resistivity curve and their p-type conductivity from Hall effect measurement.

Our results show that anodizing parameters that optimize the PL activity of the nanoporous layers in the visible range are close to those which optimize the semiconductor behavior of the layers at room temperature.

Reduction of graphene oxide [GO] has been achieved by an in-situ photoelectrochemical method in a dye-sensitized solar cell [DSSC] assembly, in which the semiconductor behavior of the reduced graphene oxide [RGO] is controllable.

In this structure, the surface chemistry of tubes introduces considerable changes in the semiconductor behavior of the underlying oxide, which in turn is manifested in surface related effects, giving rise to modifications of the redox reactions and a shift of the flat band potential respect to the base oxide, and trapping of photoelectrons [30 33].