Sentence examples for behavior of defect from inspiring English sources

In the specific case of NWs, several studies have been carried out, but they were focused on the interpretation of the different behavior of defect and NBE luminescence [16, 17].

The damage growth behavior of defect-induced damage sites have been effectively restrained by the structure of FGLs.

The influence of microstructural characteristics on the fatigue performance of these alloys and the fatigue behavior of defect-free castings, as opposed to that of castings with defects, were presented elsewhere.

The fatigue behavior of defected steel beams mechanically retrofitted by different high-strength materials was experimentally studied in this work.

The existence of the ferromagnetism induced by holes in the film with oxygen vacancy gives a new insight into the behavior of defects in SnO2.

Although the composites have significantly enhanced mechanical properties and structure integrity, there is little known about the behavior of defects in the presence of a graphite-silicon carbide interface.

By simulating theoretically the quantum energy system and carrier localization in QDs, we gained insight into the PC mechanism and were able to suggest reasons for the photocurrent reduction, by associating them with peculiar behavior of defects in such a type of structures.

We investigate the dispersion behavior of localized defect modes supported by a defect layer sandwiched within two symmetric semi-infinite one-dimensional (1D) photonic crystals (PCs) that are made from two or three constituents of dielectric media via an analytic Bloch-mode approach.

The behavior of the defect mode as a function of the stack number of the PQW defect structure, the filling factor of semiconductor metamaterial layer, the polarization and the angle of incidence were investigated for Al-doped ZnO (AZO) and ZnO as the semiconductor metamaterial layer.

The results show that the discontinuity of the stacking sequence considerably affects the configurations and behavior of intrinsic defects, especially in the case of silicon interstitials.

Next, we demonstrated that the strain energy evolution around the TJ can provide insights into the distinct binding behavior of point defects and solute atoms.