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The important factors related to the relaxor behavior in this material system were discussed in detail.
Figure 2 exhibits the quasi-isotropic etching behavior in this material since PoSi is fabricated under the mask.
These observations justify the use of FIB milling for the study of scaling behavior in this material system.
Prismatic slip is dominant, and pronounced microcrack dislocation interactions are observed, suggesting that the dislocation plasticity affects the macroscopic fracture behavior in this material under high confining stresses.
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ECC plate specimens were monotonically loaded in axial tension to induce strain hardening behavior in the material.
Furthermore, it gives the opportunity to integrate a ductile behavior in the material structure.
Recently, porous Ge (p-Ge) [2 4] and Ge nanowires (GeNW) [5, 6] have been successfully produced and Raman scattering is used to study the phonon behavior in these materials.
It appears that the overall recovery behavior in this two-phase material is driven by the martensite phase.
Therefore, it is essential to study the creep behavior of this material in order to develop a model.
To evaluate the behavior of this material in the expected service conditions, strain-controlled cyclic tests that include hold times up to 9000 s at maximum tensile strain were conducted at 950 °C.
The results show the changes in the mechanical behavior of this material at different test temperatures (20, −60 and −150 °C).
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