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Exact(10)
The detailed microstructure evolution before the reset point in the CF of Cu/HfO2/Pt RRAM devices has been analyzed.
The experimental and theoretical curves nearly coincide before the reset point, so the reset point represents the starting point of the CF dissolution.
Since the CF behaves like a metallic conductor before the reset point [29], Ireset is inversely proportional to Ron as presented in Figure 2b.
Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point.
The analytical cell-based reset model can provide an inspiration for the analysis of what has happened in the CF of Cu/HfO2/Pt RRAM before the reset point.
In Figure 5, before the reset point, the two types of curves are exactly in coincidence, which indicates that the reset point just corresponds to the starting point of the CF dissolution.
Similar(46)
If the reset point is above the V-nullcline (where dV / dt < 0 everywhere), the voltage will decrease before increasing in preparation of a spike, this trajectory is termed a broad SAP or broad reset.
These are determined by the location of the reset point in the phase plane.
If the reset point is below the V-nullcline, the spiking trajectory starts to increase immediately after the reset (dV / dt > 0 everywhere below the V-nullcline), and the SAP appears as a sharp reset.
The reset points have been notated by Vreset and Ireset.
The reset points are defined as those having and are the maximum current in the I V curves in reset process, and their voltages and currents are defined as V reset and I reset, respectively.
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