Recently, the Al droplets were successfully grown using MBE by Li et al. to improve the quality of as-grown GaN as well as reducing the stress [24].
Tin oxide (SnO2) nanorods (NRs) were successfully grown using a two-step seed-mediated hydrothermal method in the absence of surfactants.
TiCrSiN thin films were successfully grown using a hybrid approach in which a high power impulse magnetron sputtering (HiPIMS) power was combined with a radio frequency (RF) power.
Meanwhile, three-dimensional hierarchical NWs with Si wire/NWs core and ZnO NRs branches were successfully grown using vapor transport and condensation [22, 25] or hydrothermal growth [26, 27] methods.
As a result of detailed investigation of the growth behavior of MOVPE InAlN including the adduct formation, a single-crystalline InAlN film with an In content of 0.3 1 are successfully grown using the atmospheric-pressure MOVPE.
As a conclusion, the CuO NWs have been successfully grown by using thermal oxidation method which is cheap, simple, and non-catalyst method.
ZnS thin films have been successfully grown on glass substrates using RF magnetron sputtering at various substrate temperatures ranging from 100°C to 400°C.
The occurrence of oxygen (O), gallium (Ga), and europium (Eu) on the growing film, based on EDX analysis, indicated that Eu-doped Ga2O3 thin film has been successfully grown on Si(100) substrate using DC magnetron sputtering.
InN films have been successfully grown on sapphire substrates by MOVPE using trimethylindium (TMIn) and 1,1-dimethylhydrazine (DMHy) with N2 carrier.
Nanostructured polyaniline films with controlled thickness have been successfully grown on fluorine-doped tin oxide (FTO) glass substrates using the cyclic voltammetry (CV) method at room temperature.
