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The dc performance of a Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor (DH-pHEMT) grown on GaAs substrate has been simulated using a two-dimensional device simulator, to investigate the dependence of the intrinsic and extrinsic transconductance on the device channel thickness.
The operation of this gate has been simulated using a well-known single-electron circuit simulator.
In this study, the multiphase flow has been simulated using a commercial CFD code, Fluent v6.2.16.
Broadband THz pulse propagation in plasma has been simulated using a simple, yet effective Fourier Transform-based model.
These features have been simulated using a microstructure-based creep model incorporating an evolving internal stress field.
Transducer behaviour has been simulated using a linear systems approximation, with wave propagation in the structure modelled using the local interaction simulation approach (LISA).
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Rainfall events were simulated using a specially designed rainfall simulator for paved surfaces.
The algorithm is simulated using a data grid simulator, OptorSim, developed by European Data Grid projects.
A SBO accident was simulated using a Generic Pressurized Water Reactor (GPWR) simulator from KEYMASTER™.
Data ranging from low to high LD amounts were simulated using a forward-time genomic simulator.
The flow field was simulated using a simple 2D approach and a full 3D simulation.
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