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Initial prototypes have been fabricated using a modest 0.5-μm CMOS technology.
The proposed design has been fabricated using a 0.13 µm 2P6M CMOS technology.
The enhanced compact waffle MOSFET's have been fabricated using a 0.35-μm standard CMOS process.
These devices have been fabricated using a standard SOI CMOS process.
MnO2 nanorods/graphene composite materials have been fabricated using a facile hydrothermal method for supercapacitor applications.
For this purpose, a 100 μm × 400 μm sensing core prototype has been fabricated using a 130 nm CMOS process.
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A micro-supercapacitor with a three-dimensional configuration has been fabricated using an ICP etching technique.
A biphasic current stimulator chip was fabricated using a 0.8-µm high-voltage complimentary metal-oxide semiconductor fabrication process at Austria Micro-Systems Corporation as described previously [34].
Tubes were fabricated using a method adapted from a previously described protocol26.
The LED chips, measuring 1.16 mm square, were fabricated using a conventional mesa structure method.
Secondly, a temperature sensor is fabricated using a specific FBG.
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