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The maximum sulfonation (functionalization with -SO3H groups) has been achieved for sample FPCNT01 which was functionalized using a double-step chemical route, whereas the maximum phosphonation (functionalization with -PO3H2 groups) has been achieved for sample PhCNT01.
This shows that the double-step chemical route followed for the functionalization of sample FPCNT01 is relatively more effective for the sulfonation (-SO3H) of MWCNTs, whereas the maximum phosphonation (-PO3H2) has been achieved for sample PhCNT01 which was functionalized with a single-step chemical route.
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After 60 h of cultivation, an intracellular PepP activity of 90 μkatLPP Lculture-1 was achieved (for sample preparation, see Materials and Methods).
Interestingly, it was noted that the largest dielectric constant is achieved for sample with filler concentrated at the shell (around 50% higher than the rest at low frequency).
The highest ultimate load capacity and lowest stiffness degradation is achieved for sample with glass FRP infill plate, followed by hybrid (carbon FRP/steel and glass FRP/steel) specimens.
It is observed that the highest thermal conductivity enhancement of 22.31% is achieved for sample 6 (0.5 wt.% MWCNTs, 0.25 wt.% GA, sonication time 40 min) at 45°C. Figure 8 Variation of thermal conductivity ratio as function of temperature at various ultrasonication times.
A nearly complete transformation of L 10 FePt was achieved for samples annealed at temperatures above 700 °C.
The lowest shear tensile stress of 4.4 MPa was achieved for samples 11 15 of conditions Z3, this also mirrors in the mainly adhesive or near-substrate failure.
The highest degradation rate of 61.99% was achieved for samples with molar ratio (F Ti) of 0.1 after 3 h visible light irradiation.
Unexpectedly, n-type conductivity was obtained for samples deposited at substrate temperatures of 200, 250 and 300 °C, but p-type conductivity was achieved for samples deposited at room temperature (RT).
The samples were annealed in the range 100 800 °C and an optimum isolation of ∼107 Ω/□ was achieved for samples implanted at either RT or elevated temperatures after annealing at 400 °C.
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