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This is because the surface recombination, surface defects density and surface state density of YVO4 Eu3+ nanocrystals decrease with increasing the YBO3 coating.
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Sheet resistance plays an important role in determining the efficiency of a crystalline silicon (C-Si) solar cell because it is related to the surface recombination velocity.
The surface recombination rate of 23 cm/s is obtained.
For the laser analysis the surface recombination velocity, νsa_InP, is a mid-range value of 1.5 × 104 cm/s such as for a III-V material system57.
For the photodetector, the surface recombination velocity, νsa_Si, is at a mid-range value of 1.0 × 104 cm/s such as for Silicon58.
Moreover, Shockley-Read-Hall recombination, Auger recombination, and band-to-band recombination were taken into account, and the surface recombination was neglected for simplification.
Generally, the surface recombination velocity of the Si and Al2O3 interface decreases during thermal annealing because of the formation of a negative fixed charge [21 24].
However, it would increase the surface recombination velocity, and thus, decrease the cell performance [2].
Minimizing the concentration of minority concentration thus reduces the surface recombination rate.
where t eff is the effective lifetime, t bulk is the bulk recombination lifetime, S is the surface recombination rate, and W is the wafer thickness.
Hence, the surface recombination velocity can be related to the fundamental properties of the surface defects through (3).
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