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In the case of the high SRV, the conversion efficiency of AlGaAs/GaAs NWs even increases with the p-region length, because the optical generation in AlGaAs is concentrated at the center of the NW and away from the surfaces, leading to lower surface recombination compared to GaAs regions.
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After introducing CH3NH3PbI3, the optical generation profile substantially changes.
The optical generation and distribution of MM-Wave enjoys the low loss and huge bandwidth of the optical fibers.
Figure 5a shows the optical generation profiles of the AlGaAs/GaAs radial NWs.
The optical generation rates of the uncoated Si NWs are used as comparison.
The optical generation profiles of the considered structures are shown in Fig. 4.
Figure 5b displays the optical generation at 360, 560, and 760 nm.
The total optical generation profiles in a quarter of the structure are shown in Figure 3c.
The total optical generation under AM 1.5G illumination can be modeled by superimposing the power-weighted single-wavelength optical generation rates.
Fig. 5 The light distribution and optical generation in nanowire.
Fig. 3 a Optical generation profiles of the hybrid structure.
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