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Nonlinear response occurs because the band gap excitation energy matches the incident wave frequency.
This can be explained because the band gap of the semiconductors has been found to be particle size dependent [4].
A shell of CdS between CdTe and ZnS can work as a transition shell because the band gap and lattice contact of CdS is just between that of CdTe and ZnS.
This is because the band gap of InAs (about 0.35 eV) is much smaller than that of GaAs (about 1.42 eV), which results in significant asymmetry along [001] direction.
The thermal excitation of the electrons cannot be the reason for this effect because the band gap for such small thickness of the C layer (of about 4 nm) becomes large enough.
Various modifications have been devoted to TiO2 in extending the absorption edge into visible light and enhancing the photocatalytic activity [8 13], and one of them is doping TiO2 with nitrogen because the band gap of titania could be narrowed by doping with nitrogen ion since the valence band of N2p band locates above O2p band [14].
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This is because, with the band gap of WO3 being relatively small, electrons will obtain energy to jump onto the conduction band and become free electrons named photoelectrons when under visible light irradiation.
Photoelectrochemical (PEC) measurements clearly revealed that the Zn1−xCuxO nanorods increased the photocoversion efficiency to 2 times that of pure ZnO, and they exhibited a greater photoresponse to visible light because of the band gap narrowing effect.
As the temperature decreased, the blue shift of the peak to a shorter wavelength was observed, because of the band gap broadening effect at low temperatures which has been reported earlier [33].
This is because that the band gap and the energetic position of the valence band maximum and conduction band minimum of ZnO are very close to that of TiO2 and that the wurtzite structure of ZnO favors the formation of ordered 1D structures, moreover, presenting better electron transport compared with TiO2[4].
The peak can be attributed to the band gap emission, because the peak position is very near the band gap of CdS (2.47 eV) at room temperature [26, 27].
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