Sentence examples for beams at different temperatures from inspiring English sources
The analytical equations are validated by experimental tests carried out on simply supported and free free laminated glass beams at different temperatures in the range 20 40 °C.
Two types of dots, grown by molecular beam epitaxy (MBE) at different temperatures, were investigated and assessed with respect to morphological properties.
To do so, a series of pull-out tests (to investigate the shear transfer capacity of the SG) and a series of bending tests (to investigate the structural response of the beams) have been performed at different temperatures, after thermal cycling, after humidity exposure, and for long-duration loading.
The compression behavior of Ti 6Al 4V lattice structure with a cell shape of rhombic dodecahedron, which was fabricated by electron beam melting, was investigated at different temperatures.
In the analysis, double cantilever beam specimens were tested at different temperatures: 20 °C (room temperature), 0 °C, −30 °C and −60 °C (different estimated in-flight temperatures aircraft).
The FRFs of a damped beam structure are measured in an environmental chamber at different temperatures and used as reference responses.
Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500°C are overgrown with Si at different temperatures Tcap, and effect of boron delta doping of Si barriers on the mid-infrared photoresponse was investigated.
Thick quasicrystalline (QC) Al Cu Fe coatings obtained by electron-beam physical vapour deposition (EB-PVD) on titanium substrates at different temperatures have been used for damping measurements.
Quasi-static three-point bending tests at different temperatures were carried out for sandwich beams with aluminum face sheets and closed-cell aluminum foam core.
Quasi-static indentation tests at different temperatures were carried out for rigid supported sandwich beams with aluminum face sheets and closed-cell aluminum foam core.
We report the structural properties of thin magnetic Permalloy films treated by two different methods: broad beam Ga+ ion implantation at an energy of 30 keV as well as annealing at different temperatures under ultrahigh vacuum.
