0.65Pb Mg1/3Nb2/3 O3 0.35PbTiO3 thin films (PMN-PT) on LaNiO3 (LNO) metallic oxide electrode were successfully deposited using pulsed laser deposition technique.
ZnO thin films have been successfully deposited using pulsed laser deposition technique at different substrate temperatures that vary in the range of 20 400 °C.
A 5 μm thin film of ZnO is successfully deposited using RF sputtering technique on plasma-enhanced chemical deposition (PECVD) SiO2 layer of 1 μm on top of Si wafer under various operating conditions.
Those results showed that amine containing films on the crystal surfaces were successfully deposited using atmospheric pressure plasma torch.
By using the relationship between hardness and stress, 1-μm-thick ta-C films were successfully deposited using −2000 V with a moderate hardness of about 36 GPa and a low stress of less than 1 GPa.
These SRSO structures may be successfully deposited by magnetron sputtering technique.
Transparent and electrically conducting (TCO) thin films of ZnO, SnO2, In2O3 Sn (ITO), ZnO Al (AZO), ZnO Ga, ZnO Sb, ZnO Mg and several types of zinc-stannate oxides (ZnSnO3, Zn2SnO4), which could be used in solar cells, optoelectronic devices, and as gas sensors, have been successfully deposited by FVAD using pure or alloyed zinc cathodes.
A fully dense AlN ceramic film was successfully deposited at room temperature using the aerosol deposition method.
Copper antimony sulfide Cu3SbS3 thin films were successfully deposited on glass substrates using the chemical bath deposition method in aqueous solution containing (CuCl2, 2H2O), SbCl3 and Na2S2O3 as precursors.
