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TiB2 films with high hardness (> 40 GPa) could be prepared at relatively low temperatures (400 250 °C) using ICP.
However, β-TCP can also be prepared at relatively low temperatures (~150 °C) by precipitation in water-free mediums, such as ethylene glycol (Tao et al. 2008, 2009).
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Highly pure LNMO materials have been prepared at relatively low temperatures taking advantage of the relatively higher diffusion rates between reaction components [30, 31].
Be prepared at all times.
Be prepared at the start of class.
If so, be prepared at all times.
A simple cobalt catalyzed gasification strategy to synthesize drilled graphene sheets (DGNs) is performed, and 3D DGNs hydrogel is prepared at a relatively low temperature.
In this work, hybrid films of MLG and a-C were prepared at a relatively low temperature of 600°C.
When the OFETs are prepared at a relatively low substrate temperature, gentle evaporation of the solvent can be maintained, leading to a reduced solvent evaporation rate, and the consecutive droplets kept the film wet.
In summary, the solution-processed (CH3NH3 PbI3 planarkite/CuInS2 planar heterojunction solar cells with a Al2O3 scaffold have been successfully fabricated, in which the CuInS2 films as both the light harvester and hole transporter were prepared at a relatively low temperature (250°C) via a simple solution-based chemical approach to replace the commonly used n-type TiO2 layer.
Amorphous silica of high purity and relatively high surface area was prepared at 700°C.
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