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The device can be operated with current as low as 1 nA.
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An arc was operated with current pulses having a duration of 7 ms and a peak current of 200 A.
This ion source has been operated with current densities of 1 30 mandm2 and an RF power input into the plasma of 20 150 W.
The Al/Cu/Ge0.5Se0.5/W device can be operated with a current as low as 1 nA.
Memory devices can be operated with an operation current of 0.1 μA to 1 mA under an operation voltage of ±2 V.
The Al/Cu/Ge0.5Se0.5/W memory device can also be operated with a low current compliance of 1 nA, and hence, a low SET/RESET power of 0.61 nW/6.4 pW is achieved.
The FLL circuit achieved an open loop-gain bandwidth product of 8MHz with 1m wire length, which is enough for a TES to be operated with a bias current of 70μA, and a noise level of 30pA/√Hz.
A device could be operated with a low reset current of 23 μA [41].
Furthermore, the device can be operated with a small 'RESET' current of 23 μA.
Furthermore, the device could be operated with a small RESET current of 23 μA.
A device could be operated with a low RESET current of 23 μA. Figure 8 Long pulse endurance and good data retention.
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