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In contrast to the existing results, the proposed method has the following advantages: (i) flexible vibrations can be effectively suppressed, and (ii) the control performance is greatly improved, as well as (iii) the control inputs do not need to be limited in controller design.
In such conditions, the intersymbol interference (ISI) can be effectively suppressed, and thus, sufficient multipath energy is captured to make the impact of the intercarrier interference (ICI) minimized.
We also show that carrier recombination in ZnO nanowire-based dye-sensitized solar cells can be effectively suppressed and the photovoltaic conversion efficiency enhanced by introducing the TiO2buffer layer prepared by sputtering method.
The growth of established tumors can be effectively suppressed and hold back over large periods of time (immunological equilibrium).
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HBeAg is effectively suppressed and HBV DNA decline is more pronounced in sequential treatments using IFNα and TAF in contrast to monotherapy (Supplementary Fig. 6a d).
Consequently, measurement noise is effectively suppressed and steady state accuracy is guaranteed even in the presence of input disturbances.
The occurrence of missed and false damage alerts is effectively suppressed, and we show that the new algorithm gives a better performance than our previous SBL method in the real data case where there is significant modeling error.
As a result, both the numerical and experimental results show that through such novel particle design, the elemental vaporization of NiCr core is effectively suppressed and the Ni-based alloy particle is definitely heated up to an ultra-high temperature, 2920 K, which is comparable to that of molten Mo particles and is about 500 K higher than that of conventional NiCr particle.
It indicates that the noises are effectively suppressed and the image quality is improved.
Compared to other conventional DDPG MOSFETs, the short-channel effects (SCEs) including the off-state current, the gate leakage current and the drain induced barrier lowering effect (DIBL) can be effectively suppressed by the p+ buried layer and thicker D-gate oxide film.
Besides, EIS analysis indicates that two kinds of Al2O3 coating layer lead to different polarization impedance, and the growth of polarization impedance during charging/discharging can be effectively suppressed by Al2O3 coating, and thus the electrochemical performance of the coated samples is greatly enhanced.
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