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The basic electrical properties of bottom-gated bilayer graphene FETs were first studied in the atmospheric environment.
To investigate the basic electrical properties of p-type Si NWs, we prepared a conventional NW FET on a 100 nm SiO2/Si substrate with a back gate.
The geometrical parameters (average length, width and thickness, relations between designed and real dimensions, distribution of planar dimensions) are correlated with basic electrical properties of resistors (sheet resistance, temperature dependence of resistance), long-term stability as well as durability of microresistors to short electrical pulses in the temperature range from 25 °C to 400 °C.
DOI: http://dx.doi.org/10.7554/eLife.10013.017 Standard protocols were used to compare basic electrical properties of WT and Slo2 dKO neurons either with 10 mM (Table 1, top) or 0 mM (Table 1, bottom) pipette Na+.
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Third, basic electrical properties (resting membrane potential and input resistance) of SACs were preserved in Pcdhg and Pcdhg retinas (data not shown).
The capacitance (Cm) of biological membranes represents a basic electrical property.
In addition to the conductance, the capacitance of biological membranes (Cm) represents a basic electrical property.
The structure and basic mechanical and electrical properties of this material were investigated through cyclic compression and in situ resistance measurement.
Depending on the initial substrate doping level, silicon nanowires present different percentage of porosity [15] which affects the basic mechanical and electrical properties of the nanostructure, influencing the depletion region, the band structure and charge traps as well as complicating the realization of proper electrical contacts [16].
Basic constructional data and essential electrical properties of the capacitive divider are provided, along with details on how to determine them.
They used a model mimicking electrical properties of the basic body tissue and observed best performance at 3cm depth inside the liquid model.
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