Sentence examples for based on the rupture from inspiring English sources

In this context, one possible common early pathway may have been based on the rupture of the fragile lysosomal membrane by oxidative stress and consequent release of lysosomal enzymes.

Based on the rupture speed and direction, the high-frequency source process can be divided into two parts.

The average slip amount of the 1979 earthquake was estimated as 2.1 5.2 m based on the rupture area and the seismic moment, as suggested by Kanamori and McNally (1982) and Kanamori and Given (1981), when the average rigidity assumed a range of 2.0 × 1010 5.0 × 1010 N/m2.

Although our study and the earlier Hedén study used the gold standard rupture detection method of MRI, the rupture rates were based on the rupture prevalence at a point in time after implantation, approximately 8 years after implantation in our study.

Alternatively, van Doorn (2011) later argued that since the vacuole is involved in almost all plant PCD types (including those not falling under the definition of vacuolar cell death), that plant PCD categories should be based on the rupture of the tonoplast in relation to cytoplasmic clearing [ 17].

Based on the mainshock rupture patterns, the shallow (< 25 km depth) receiver faults were assigned average parameters (230° strike, 70° dip, and 150° rake), whereas a 221° strike, 12° dip, and 125° rake were considered for the deep interface fault.

Next, based on the suggested rupture areas of historical earthquakes around the coring sites, we roughly estimated the peak ground acceleration (PGA) at the possible source zone of the turbidity currents resulting in the turbidites in the two cores (Fig. 1A) using an empirical attenuation relation commonly used in Japan (Additional file 7: Table S3; Si and Midorikawa 1999).

Based on the pilus pilus rupture forces, all four morphotyes shown in Figure 7 can be explained.

The switching mechanism is based on the formation and rupture of the conducting filament at the IrO x (TE /GdO x interface, depending upon the electrical bias.

The resistive switching mechanism is based on the formation and rupture of oxygen vacancy conducting filament in the GdOx material depending upon electrical stimulus.

Switching mechanism is based on the formation and rupture of conducting filament at the IrO x /GdO x interface, owing to oxygen ion migration.