Atomic layer deposition (ALD) is a novel thin film deposition technique based on sequential self-limited and complementary surface chemisorption reactions using precursor vapor.
So far, the only effective approach growing high-quality thin films is the atomic layer deposition (ALD) technique based on sequential self-terminating gas-solid reactions [7].
It is a thin film growth method based on sequential, self-limiting surface reactions that can deposit conformal thin films with excellent conformal step coverage and is ideal for the deposition on complex non-planar surface topography [22, 23].
Atomic layer deposition (ALD) is a technology based on sequential self-saturated surface treatment and reactions, which lead to the controlled cycle-by-cycle period growth of very thin films.
So far, the only effective approach growing high-quality thin films is atomic layer deposition (ALD) technique based on sequential self-terminating gas-solid reactions invented both by the group of Professor Aleskovskii in the 1960s in the Soviet Union [14] and by Suntola and co-workers in the 1970s in Finland [15].
Atomic layer deposition (ALD) is a new type of thin film deposition technology based on sequential self-limited and complementary surface chemisorptions reactions using precursor vapor with simple and precision thickness control, large area uniformity, and excellent three-dimensional conformality, especially for deposition of nano-laminated structure [18, 19].
Suzuki, K., Horiba, I. & Sugie, N. Linear-time connected-component labeling based on sequential local operations.
These methods are based on sequential Monte Carlo techniques ("particle filtering").
It uses Matlab software based on sequential running time.
PF is a sequential Monte Carlo methodology based on sequential importance sampling (SIS).
Most of the solutions are based on sequential methods that make inference according to current information.
