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The measurements were performed with an absorption spectrometer based on a semiconductor laser source emitting around a 2-μm wavelength.
An integrated wideband optical frequency comb (OFC) based on a semiconductor quantum dot laser is realized with high stability.
We have carried out a measurement campaign in Vulcano island with a portable spectrometer based on a semiconductor laser, which can monitor in-situ concentration and flux of CO2 and H2O.
First results are reported regarding the design, fabrication and operation of a DNA biochip based on a semiconductor oxide electrode that employs label-free electrical detection of the DNA hybridization.
In addition, similar result was also obtained in the PFETs based on a semiconductor, poly{[N,N′-bis 2-octyldodecyl -1,4,5,8-naphthalenediimide-2,6-diyl-alt-5,5′-di(thiophen-2-yl)-2,2′-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene]}.
In the existing literature there are two types of optical mapping of reversible logic gates: (i) based on a semiconductor optical amplifier (SOA) using a Mach Zehnder interferometer (MZI) switch; (ii) based on linear optical quantum computation (LOQC) using linear optical quantum logic gates.
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They are a mix of aluminum, indium and other materials, based on a compound semiconductor called gallium nitride rather than on silicon chips.
It is based on a SDD semiconductor detector with an energy resolution better than 200 eV at 5.9 keV line.
A new architecture for bidirectional gigabit colorless wavelength division multiplexed-passive optical network system based on a reflective semiconductor optical amplifier is proposed.
The development of the readout system for this apparatus led to the construction of two photon position sensitive detection (PSD) systems: the first is based on a classic semiconductor PSD sensor; the second developed around a new design that mixes two linear CCD arrays and optics to provide superior performances.
Currently, the most popular approach for the fabrication is based on a metal-semiconductor-metal (MSM) structure by direct growth of lateral ZnO NRAs because the MSM photodetector is simple for easy fabrication and compatible with various semiconductor nanomaterials [10 13].
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