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Here, the barrier thickness is fixed at 10 nm.
With barrier thickness increasing, EF-ED is decreasing.
The oscillation shows similar behavior as the barrier thickness increases.
With this barrier thickness, the dependence of T 0 on doping concentration is more anomalous compared to that of when the barrier thickness is 10 nm.
The 2-DEG density is increasing with increasing barrier thickness, while the ED and E1 are constant and independent on the barrier thickness.
Varying the barrier thickness (for fixed well-width), or the well-width (for constant barrier thickness), the intensities of the relevant PL-peaks change drastically.
For a real tunnel junction, the junction area and barrier thickness should be temperature independent.
Consequently, the temperature characteristics become anomalous as the barrier thickness or doping concentration increases.
Figure 5 I-V asymmetry dependence with an AlAs barrier thickness of 1.6 ~ 2.73 nm.
As the outer barrier thickness is increased, the quality factors of the transmitted resonant peaks increase.
Below the dislocation-free critical thickness, the structure will be coherent regardless of the barrier thickness.
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