Sentence examples for barrier at the interface from inspiring English sources

To reduce the effect of the barrier at the interface, buffer layers are inserted.

The I-V curve is symmetrical and near linear, which indicates just a small barrier at the interface between the nanowire and two electrodes.

The abrupt potential barrier at the interface of AZO and p-type a-SiC H is ma-SiC Hdual by isserting a buffer layer.

where ΔE is energy barrier at the interface of core/shell structure; m is the effective mass of diffusing particle; a is the thickness of energy barrier.

Schottky barrier at the interface also helps the transferred hot electrons accumulate in the Fe2O3 conduction band, preventing them from traveling back to the Au NPs.

The characteristic is not perfectly linear, which presumably arises due to contact barrier at the interface of the thin sheets and Au electrodes.

In addition, a reduction of n may increase barriers at the interface [25, 26]; a usual Ni silicide barrier (around 0.7 eV) may be completely restored at some domains or be still reduced (around 0.5 eV) at different places.

However, there is increasing evidence that Schottky barriers at the interface may play a central role [8, 9, 10], which affords new features, such as unusual transfer characteristics, temperature-dependent electrical transport, and the ability to apply effective dopants.

Different heights of the Schottky barriers at the interface of metal and semiconductor which dominate by the surface states will make the asymmetrical I-V curves in dark condition.

This can be understood as follows: for device A with type-I MQW structure, injected electrons and holes located at potential wells as EMLs and the barriers at the interface of EML/TPBi are 0.2 eV either at the LUMO or HOMO energy level, which can be seen in Figure 3a.

The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.