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The reflection dips of the metal-coated NP arrays were broad and pronounced, whereas the dips of the bare array were very weak.
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The reflection dips of the metal-coated arrays were much broader and more pronounced than those of the bare arrays.
It is found that the optimum sputtering time is 60 s, and such electrode delivers a reversible capacity of 455, 316 and 187 mAh g−1 at a current density of 2, 4 and 7.18 A g−1, respectively, higher than the bare NiO array electrode.
The green down-triangle line represents the EQE of bare SiNW array without AgNPs.
The black square line represents the J-V characteristics of bare SiNW array without AgNPs.
The green down-triangle line represents the reflectance of bare SiNW array without AgNPs.
In AgNP-decorated cases, the reflectance curves lift up a little more than those in bare SiNW array, indicating the scattering effect of AgNPs.
Fig. 1 a Schematic diagram and b top-down and cross-sectional scanning electron microscope images of the bare Si NP array.
The intensity profiles of the bare NP array in Fig. 4a, b show that the incident light is strongly concentrated in and around the NPs at α and β.
Based on the active functions of the two materials, the capacity (0.042 mAh/cm2) of Sn/TONT arrays is increased relative to that (0.025 mAh/cm2) of bare TONT arrays and the capacity retention of Sn/TONT was maintained to be 75% at 5 C.
In this aspect, the nano-branched TiO2 arrays on FTO turned out to be more desirable than bare nanorod arrays for the applications of quantum dot-sensitized solar cells.
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