In POC, these bands were located at 920 and 835 cm−1.
In the experimental IR/Raman those bands were located at 1265/1263 cm-1.
After heating for 19 h, the final absorption bands were located at 517, 481, 460, 445, 432, and 422 nm, respectively (Fig. 1c).
The four bands were located at 150 kb, 300 kb, 450 kb, and 600 kb, all of which were in multiple relations.
The white bands were located at different Rf values and this suggested that in the quantitative antimicrobial assays more than one compound was responsible for antimicrobial activity.
However, forsterite bands are located at shorter wavelengths and are somewhat sharper, so that their long-wavelength wings may be of less influence.
Observed FTIR bands are located at around 600 to 750 cm−l (wagging modes), 800 to 1,000 cm−1 (bending modes), and 2,050 to 2,200 cm−1 (stretching modes) associated with Si-H n (n ≥ 1) bondings.
Two strong bands are located at 379.3 and 404.8 cm−1, which are ascribed to the in-plane vibrational (E1 2g) and the out-of-plane vibrational (A1g) modes, respectively [22, 23].
Furthermore, the absorption band at 264 nm of pure TPP in CHCl3 was not detected in the UV/Vis absorption spectrum of the TPP-CIGS complex in which its main absorption bands are located at 320 and 400 nm in the same solvent.
Observed FTIR bands are located at around 2,050 to 2,200 cm−1 (stretching modes), 800 to 1,000 cm−1 (bending modes), and 600 to 750 cm−1 (wagging modes) associated with Si-H n (n ≥1) bondings, and finally, the band at 1,000 to 1,300 cm−1 corresponds to the stretching modes of the Si-O-Si bonds in the SiO x.
For pure hematite and goethite, characteristic bands are located at approximately 535 nm and approximately 425 nm, respectively (Scheinost et al. 1998; Torrent et al. 2007), but are reduced with increasing degree of Al substitution within the crystal lattice (Liu et al. 2011; Jiang et al. 2014).
