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Bandgap modification of the LuxY1−xPO4 mixed crystals has been studied by thermostimulated luminescence (TSL) and ab-initio calculation methods.
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Interesting applications include high-performance oxygen reduction reaction (ORR) catalysts, bandgap modifications of BN-doped graphene, and as active layers in FETs.
Rare earth-substituted compounds with various compositions have become an increasingly important research topic in diverse areas, such as luminescent device, light-emitting displays, biological labeling, and imaging [4 6], due to the introduction of dopant levels within the bandgap and modification of the band structure.
It is also of interest to estimate the magnitude of the bandgap modification due to electron-phonon interaction in isolated monolayers of BN.
The study suggests that the suppression of bipolar conduction by means of a bandgap modification can be an effective approach for enhancing zT further via a simple In-doping process in Bi0.4Sb1.6Te3.
The modification of the bandgap was attributed to the change in the molecular structure of PCBM by electron irradiation.
Figure 2 Modification of the BN bandgap.
Our results reveal the modification of the energy bandgap, carrier density, and drain current upon strain.
These results suggest a simple and effective approach for tuning the bandgap in a conjugated polymer through modification of the pendant acceptor groups.
Proper modification of the firearm.
and uncontrolled strain-induced modifications of the bandgap profile (the piezoelectric effect).
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