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We have calculated the electronic band parameters for the heterointerface Ge/InxGa1−xAs.
Two band parameters were semiempirically constructed from pseudopotential radii and valence.
The space of band parameters leading to parametric instability shrinks with increasing axial tension and with increasing band velocity.
The AlN content for the drastic change showed good agreement with the critical content predicted based on band parameters.
Critical content of AlN for B1/B4 phase change was predicted by using the structural map constructed from two band parameters.
The band parameters exhibit very good matching with the theoretical results and order-of-magnitude agreement with the experimental observation of the PLC effect.
Similar(31)
The energy value of the band parameter - in this case 2.3 keV - is ignored and only the low and high energy limits are used.
The examples and description of the band parameter describe how explicit energy ranges and effective energies can be specified if required.
Calculations of the electron-band parameters are made by using self-consistent solutions of coupled Schrodinger Poisson equations.
The electron-band parameters of the heterostructures have been calculated self-consistently by taking into account the piezoelectric and spontaneous polarizations.
Figure 9 shows a diagram of G-band parameters.
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