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Transmittance measurements yielded band gap values of 1.07 and 1.64 eV for CuInSe2 and CuGaSe2, respectively.
Di Quarto, F., Sunseri, C., Piazza, S. & Romano, M. C. Semiempirical correlation between optical band gap values of oxides and the difference of electronegativity of the elements.
The energy band gap values of PANI and its composite were found to be 1.50 and 1.35 eV, respectively.
The band gap values of the materials deduced by UV-DR spectroscopy were situated between 2.35 2.93 eV.
Optical band gap values of the copolymers were found in the range between 1.85 and 2.06 eV.
Results show that the calculated band gap values of the bulk GaN, Ga0.75Al0.25N, and Ga0.625Al0.375N are 1.630 eV, 2.261 eV, and 2.272 eV respectively.
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Both films show an optical band gap value of about 1.09 eV.
The calculated band gap value of 3.38 eV is consistent with the optical reflectance measurements value of 3.76 eV.
The small band gap value of CsSnI3 in a cubic structure was also predicted using the GW method13,15 (DFT-1/2: 0.82 eV, GW: 0.60 eV and 1.01 eV).
Optical transmittance of 90% in the visible light region with the band gap value of 3.35 eV is measured.
Also, UV Vis analyses are carried out to assess the band gap value of CIS, resulting in 1.42 eV.
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