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The cell with the highest band gap is placed on the top, while the cell with the lowest band gap is positioned at the bottom of the tandem stack.
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The band gap is found to be at a maximum when the Ge dopants are placed in the same ring points of the fullerene, due to the combined influence of symmetry breaking of the ring, and the band gaps are closed when Ge dopants are placed in opposite positions.
A complete band gap is observed (shaded frequency range).
This energy band gap is within optimal band gap range useful for long wavelength absorption.
The fundamental band gap is determined to be 2.83 eV.
The band gap is nearly constant, at 3.27 eV.
As the band inversion of this TI accompanies with an indirect band gap, the TI bulk band gap is the indirect band gap, not the SOC gap.
The optical band gap is the value of optical energy gap between the valance band and the conduction band.
The highest band gap is related to S-A-3.
We estimated that the band gap is about 1.8 eV.
The band gap is also calculated from photoluminescence.
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