Sentence examples for band barrier from inspiring English sources

A novel strained-Si pnp heterojunction bipolar transistor (HBT) design, suitable for virtual substrate technology, is proposed that is inherently free from the detrimental valence band barrier effects usually encountered in conventional SiGe pnp HBTs on silicon.

The parasitic energy band barrier induced by the SiGe/Si transition in the collector base space charge region produces very different design constraints for pnp and npn transistors, and they must be optimized separately.

A useful approach to reduce the hole blocking effect is to increase the hole concentration within the p-EBL region, which then helps to decrease the valence band barrier height [25].

The presence of NiO buffer layer probably blocks the electron injection from the ZnO to the GaN because the smaller electron affinity (1.46 eV) and large band gap (3.86 eV) of NiO could have possibly raised the height of the conduction band barrier.

The hole diffusion in 3D SiGe/Si nanoislands with a high Ge content is controlled by large (> 100 meV) valence band barriers [22].

We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FETs and the 60 mV/decade limitation of MOSFETs at room temperature.

Interpreting the band-to-band tunneling barrier as a SB, the expected inverse subthreshold slope can be computed with ( Sapprox {k}_BT/qcdot ln(10);left(1/2+1/3cdot sqrt{d_{mathrm{G}hbox mathrm{S}mathrm{G}}{d}_{mathrm{WSe}2}}right) ) [36] 36] yielding S ≈ 358 mV/dec.

However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber barrier interface.

For example, electronics engineers designing a circuit need to understand not only the current-voltage relationships but also concepts of electron motion, band gap, barrier potential, etc., and how they affect the observed current-voltage graphs.

Despite the greater value of the hole effective mass in the present system compared with that of the arsenide-based one, the main reason of such a difference lies in the height of the valence band confining barrier, which in the latter case is almost three times larger than the one formed in the nitride-based heterostructure studied here.

EGFP-SDC-4 was monitored at 488-nm argon excitation using a 510- to 535-nm band pass barrier filter.