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The heterostructure energy band alignment is proposed.
The band alignment at α−Al2O3/C3N interface is presented.
Diagram 3 shows the band alignment for current saturation.
b Equilibrium band alignment of the hybrid structure.
The inset is band alignment among TiO2, CIS, and P3HT.
Figure 7 Optical adsorption, band alignment and power-conversion efficiency.
b Band alignment scheme for the Si/CH3NH3PbI3 heterostructure.
Band alignment extraction was based on Kraut method [15, 16].
Therefore, a nested type-I band alignment is obtained.
Figure 1 Band alignment of ZrO 2 /IL/Si system.
A schematic band alignment diagram for the TiO2/CuGaO2 interface was constructed which showed a type II band alignment with a significant band bending of 0.48 eV.
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