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Aspects of back contacting CdTe/CdS devices, including etching, Cu application, contact annealing, back contact chemistry and secondary contacts, are discussed.
Some aspects of back contact stability are presented, including discussion of apparent robust back contacts, which contain a thick Te component.
400, 600, and 1000 nm ITO nanorod substrates were used as back contact electrodes.
Several variants in the interdigitated back contact (IBC) design have been introduced over the past several years.
Molybdenum is conventionally used as electrical back contact for Cu(In,Ga Se2 (CIGS) solar cells.
Meanwhile, the work function of back contact larger than 4.8 eV is beneficial.
The FeS2-NC back contact solar cells show good thermal stability under initial tests.
Graphene nanolayer was chosen as the back contact because of its high thermal conductivity.
Two different back contact concepts are discussed, which are either based on Cu or Ti.
Integration in a back contact design further reduces these interface losses and avoids shading.
This results in higher recombination and lower electron flux (photocurrent) to the back contact.
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