Sentence examples for attributed to the dislocation from inspiring English sources

These instabilities are attributed to the dislocation nucleation and propagation.

Interestingly, the flow of the material along the edges of indent impressions is clearly presented, which is attributed to the dislocation introduced.

The decrease of yield stress above anomalous peak temperature (Tp) in tensile results can be attributed to the dislocation creep process.

The inverse martensitic transformation temperatures increased and martensitic transformation temperatures decreased with increasing thermomechanical training cycles, which was attributed to the dislocations introduced into the TiNi shape memory alloys.

This improved material stability and reliability are attributed to the enhanced dislocation pinning effect corresponding to the number density, size and space distribution of nanoprecipitates, which could be tailored by manipulating the WLSP processing conditions and by post-shock tempering.

According to theoretical evaluations, the significant increase in electrical conductivity and decrease in yield strength can be attributed to the decreasing dislocation density and changes to the grain boundaries.

It can also be attributed to the higher dislocation density around the reinforcement particles due to the difference of mechanical property and thermal mismatch (Ozdemir and Toparli 2003; Ramesh et al. 2011).

The ductile failure mode is attributed to the limited dislocation pile-up distance available for very thin ligaments, which prevents high stresses from building up and eliminates cleavage fracture.

The normal contact stress under the indenter is no longer decreased with the increase of the indenter widths, but presents an obvious change (i.e. at x = 0.24 nm, the normal contact stress under the action of indenter width 4d, 8d, 12d, 16d and 20d are 10.83, 5.96, 3.96, 9.10 and 7.50 GPa, respectively), which may be attributed to the different dislocation activities during nanoindentation.

Such phenomena can be attributed to the reduced dislocations or defects, which may result from the less lattice mismatch between InAs QDs and InGaAs capping layer after annealing.

The modelling results reveal that the stable ISRS should be attributed to the thermally-activated dislocation motion dominated by interstitial carbon atoms and the negative SRSW should be due to the suppression of the dislocations and deformation twins caused by the adiabatic heating associated with high strain rate deformation.