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The PL property of GQDs-1 was attributed to defect state emission into intrinsic state emission.
The enhanced photocatalytic activity and photoluminescent properties were attributed to defect induced band gap engineered CeO2 NPs.
The discrepancy of about 0.33 eV between the two values is possibly attributed to defect bands or is a measure of exciton binding energy.
In the paper, the author ascribed the increase in conductivity to a substitutional activation of Ga in the Ge nanowires; the conductivity decrease at high doses is attributed to defect generation and, finally, amorphization.
Further, reduction in τ1 from 3.67 to 2.34 ns with size reduction in Si-40 is consistent with the quantum confinement effect, and this minimizes the possibility of the fast decay dynamics to be attributed to defect states.
This has been primarily attributed to defect in SERCA2a function coupled with abnormal RyR2 activity.
Similar(54)
PL decay measurements show that this band has a characteristic lifetime of about 5 ns, and thus, it is attributed to defect-related luminescence [24, 25].
These are attributed to defects of coating layer.
Such traps have been attributed to defects related to the presence of ripened QDs [46].
Selectivity loss was attributed to defects or impurities adsorbed to the tungsten surface.
However, the low-energy PL peak may be attributed to defects.
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