Sentence examples for attribute defect from inspiring English sources

Suggestions(1)

The phrase "attribute defect" is correct and usable in written English.
It can be used in contexts related to quality control, product evaluation, or technical assessments where a specific defect is linked to a particular attribute of an item or system.
Example: "The quality assurance team identified an attribute defect in the software that caused frequent crashes."
Alternatives: "characteristic flaw" or "property defect".

Exact(1)

Using the results from the laboratory experiments it was possible to attribute defect rates to the respective reflector materials and rank them regarding the resistance towards erosion, specific for this setup.

Similar(59)

This finding suggests that both SITA were correct in their diagnosis of a VGB attributed defect and the false positive rate was therefore 0%.

One patient was falsely identified as being normal with SITA Fast when there was a VGB attributed defect on the Full Threshold algorithm (1/6) suggesting a false negative rate of 17%.

Closer inspection of the "normal" Full Threshold visual field plot (patient 15 Figure  3) reveals that if those locations demonstrating a 2% loss on pattern probability analysis were also included in the analysis then the patient would have been diagnosed with a VGB attributed defect.

The PL property of GQDs-1 was attributed to defect state emission into intrinsic state emission.

The enhanced photocatalytic activity and photoluminescent properties were attributed to defect induced band gap engineered CeO2 NPs.

The discrepancy of about 0.33 eV between the two values is possibly attributed to defect bands or is a measure of exciton binding energy.

This method can quantify the driving strength of the implicit relation between users, and avoid the multiple attribute weighting defects in subjective and objective aspects.

Small holes are visible only on the AlGaAs surface that we attribute to defects caused by contamination of the highly reactive AlGaAs surface during the 1-h growth interruption.

In the paper, the author ascribed the increase in conductivity to a substitutional activation of Ga in the Ge nanowires; the conductivity decrease at high doses is attributed to defect generation and, finally, amorphization.

Further, reduction in τ1 from 3.67 to 2.34 ns with size reduction in Si-40 is consistent with the quantum confinement effect, and this minimizes the possibility of the fast decay dynamics to be attributed to defect states.

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