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The excess Mn atoms modify the electronic structures of the unsubstituted Mn atoms, resulting in the sharp decrease of the magnetic moments of the unsubstituted Mn atoms with increasing Mn content.
The total magnetic moment of the completely ordered alloy exhibits a minimum around x = 0.7 due to the competition between the increasing magnetic moments of Mn atoms and the decreasing moments of Ni atoms with increasing x.
Their FTIR spectra present C N modes, besides the TiN ones, that indicate a progressive substitution of nitrogen by carbon atoms with increasing oxygen content (and lowering N/Ti ratio).
This reflects the combination of quantum and geometric effects associated with the respective evolution of electronic properties from atomic like to delocalised bands, and shifting population of low to high coordination surface atoms, with increasing nanoparticle size and dimensionality.
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Every important substructure, except for the carbonyl group, includes a group of atoms with increased weights.
The results indicate that the thin films deposited on (100) silicon substrate at the temperature of 300 °C are Si C H thin films, and the content of C atoms increases with increasing both CH4 gas source and deposition power.
From the activity tests using model compounds, the HDS activity of the fresh catalyst was found to increase up to 4.0 Mo atoms nm−2 with increasing CoMo loading.
The plastic flow increased when the kinetic energies of material atoms increased with increasing temperature.
Self-diffusion coefficients of Si and O atoms decrease with increasing SiO2 contents in bulk silicate liquids because of the difference in bond strength between Si-O covalent bonds and ionic bonds.
It is the only exception to the general trend of the contraction of the atoms with increase of atomic radius (caused by the lanthanide contraction ) that is not caused by the filled (or half-filled) 4f-subshell.
Figure 9 AFM images of sample C and sample D. (a) 1 × 1 μm2 for sample D. (b) 1 × 1 μm2 for sample C. (c) 0.5 × 0.5 μm2 for sample D. (d) 0.5 × 0.5 μm2 for sample C. Table 3 and Figure 10 show the percentage compositions of different atoms in samples A, B, C, and D. The percentage composition of La atoms in films increases with increasing La/Al precursor pulse ratio.
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