The phrase "atom contamination" is correct and usable in written English.
It can be used in contexts related to science, particularly in discussions about materials, chemistry, or environmental issues where atoms or particles are unwanted or harmful.
Example: "The laboratory results indicated a significant level of atom contamination in the sample, which could affect the accuracy of the experiment."
Alternatives: "atomic contamination" or "particle contamination".
Without carbon atom contamination, the junction of conductive and SEE layer presents a typical band gap diagram.
With carbon atom contamination, the recombination center and surface defect states appear, and the different band gap diagram is shown in Figure 12C.
Although the chemical analyses revealed a significant Ga atom contamination of the samples originating from the sample preparation, the face-centered cubic CrN-based phases and their textures, found in electron micro-diffraction analyses as well as in X-ray diffraction measurements, were scarcely influenced by the incorporated atoms.
According to generalized Ohm's law [38], the flow of charge is caused by Fermi level difference which is related to working temperature, and the valence band gap offset is influenced by temperature change and defect states produced by carbon atom contamination.
The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc.
Such combination of methods allowed us to control simultaneously the variation of surface chemistry (including stoichiometry and purity) of Ag-covered L-CVD SnO2 nanolayers by XPS, during the desired desorption of surface atoms (including contaminations) from these nanolayers.
A key task is to maintain the reflectance of the mirrors above 99.97% for long periods of operation, protecting all the components from thermal and neutron damage, and from caesium, sputtered atoms and other contamination.
F atoms exist in the contamination layer, such as sediments, on the sample surface etched using the mixture gases of CF4, Ar, and H2 gases.
Different properties of grown thin films depend directly on the microstructure of the thin film, which can vary for different deposition methods and deposition parameters, namely, deposition rate, substrate temperature, ratio of ions to neutral atoms and the amount of contamination.
In order to avoid the contamination from Au and other metal atoms, it is highly preferred that NWs can be grown without catalysts.
However, these lithographic techniques inevitably involve contamination by residual polymer and disordered C atoms at the edges caused by the reactive ion bombardment [29, 42 47].
