The phrase "at the device surface" is correct and usable in written English.
It can be used in contexts related to technology, engineering, or scientific discussions where the location or interaction with a device's surface is relevant.
Example: "The measurements were taken at the device surface to ensure accuracy in the readings."
Alternatives: "on the device surface" or "upon the device surface".
A commercial two-dimensional drift diffusion tool is used to investigate electric-field distributions, the effects of electron capture at the device surface under hot-carrier conditions, and the impact of drain recess scaling on such effects.
In this study a computational modeling approach was used to design a diffusion sink placed at the device surface that would retain pro-inflammatory cytokines for sufficient time to passively antagonize their impact on the FBR.
Early examples focused on minimizing the number of available protonation/deprotonation groups at the device surface via the introduction of a silane layer that covalently reacted with hydroxyl groups on the dielectric surface.
Figure 5c shows an OM image of the device surface at time zero (t = 0 s) or pristine one.
Microfabricated devices for single cell studies in particular often require cells to be spatially positioned at specific culture sites on the device surface.
This is because at the nanoscale, even the smallest impurities or defects in the device surface affect its vibrations.
The external quantum efficiency of the electroluminescence (EL), defined as the ratio of the emitted photons to the injected electric charges, was calculated from the EL intensity measured by using a calibrated Si photodiode placed at a normal angle to the device's surface.
Because of the design, the device layout at the wafer surface introduces during this process significant variations of optical absorption and heat transfer that can induce temperature non-uniformities over the die, detrimental to the device and often called "pattern effects".
In addition, due to the wide bandgap of PEDOT PSS, PEDOT PSS film could reduce the interface recombination velocities and block electrons from recombination at the front surface of device.
And for NWs with thicker AlGaAs shells, as fewer carriers can reach and recombine at the surface, the device performance is less degenerated.
