The phrase "as well as doping" is correct and usable in written English.
It can be used to indicate that doping is included along with other items or actions being discussed.
Example: "The athlete was found guilty of using performance-enhancing drugs as well as doping during the competition."
Alternatives: "in addition to doping" or "alongside doping".
It has been shown that the photocatalytic activity of TiO2 can be modified by deposition of Cu nanoparticles as well as doping with nitrogen.
I'd hesitate to credit the tennis authorities with that at all – on fixing as well as doping they are almost universally useless – it seems to be more the result of changes in the gambling markets".
In this work, we try to optimize system parameters to obtain minimum dispersion and dispersion shifted fiber with control of the doping levels of Er ions and Si-NC as well as doping profiles.
Furthermore, the Shockley-Read-Hall recombination as well as doping and electric field-dependent mobility models are also applied.
Moreover, physical models including Shockley-Read-Hall recombination, Fermi statistics as well as doping and electric field-dependent mobility are also used.
Indeed, those SiNWs differ from SiNWs synthesized by metal-assisted wet chemical etching (top-down approach), especially in the defect type and quantity, SiNW density, as well as doping mechanism [23].
Moreover, the static dipole polarizability of pristine C60 and AlC59 fullerenes are more sensitive to metal decoration (3) Atoms in molecules analysis show that the interactions between alkali metal atoms and pristine as well as doped-C60 are noncovalent with electrostatic dominant character.
In addition to pure ZnO, there are many reports on acetone vapor sensitivity of other metal oxide semiconductors such as WO3 [22], α-Fe2O3 [23], In2O3 [24], SnO2 [25], and Fe2O4 [26] as well as doped-ZnO [18, 27, 28], and a summary of their results is listed in Table 4.
After that, the values of the dielectric constant of PST crystals become larger after thermal annealing as well as after doping with Ge.
Mott's 3D variable range hopping (VRH) is the mechanism responsible for charge transport at low temperatures for HCl as well as H3PO4 doped samples, whereas a deviation is observed at higher temperatures for all the HCl doped samples.
We find that the electronic structure properties depend on the doping concentration of MCNTs, as well as the doping position.
