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This quantity is investigated as a function of the quantum dot dimensions, the impurity position, the external electric field intensity and the hydrostatic pressure.
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Intersubband (ISB) absorption in the range of 1.5 1.9 μm was investigated in these structures as a function of the main quantum well design parameters.
The energy band gap of the films as a function of the crystal size exhibited quantum effects below 11.8 nm.
This effect is attributed to the changes in the density of states of electrons as a function of the dot size that is, a quantum size effect.
We present the results as a function of the incident photon energy for GaAs/AlGaAs quantum dots ranging from few nanometers to tens of nanometers.
As a function of the ILF-parameter, for several values of the quantum well-width with F = 0 and P = 0.
As a function of the applied electric field for several values of the quantum well-width (L) withα0 = 3L/4.
Figure 5 Linear conductance σ as a function of the Fermi energy E F under several different values of the quantum dot 3. Other quantum-dot energy levels are chosen as,, and, respectively.
The reaction efficiency of their ethers was tested in terms of kinetics of release, quantum yields in solution, or quantum yields in the solid state as a function of the irradiation wavelength for some of them.
The quantum short-channel effects were studied as a function of the dimensionless characteristic length l = L/λ of the transistor channel, where L is its physical length.
Quantum interference visibility reduces as a function of the strength of decoherence, parametrized by the parameter Λ.
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