This work quantitatively examines the dependence of total SOFC stack resistance as a function of interconnect contact spacing, interconnect contact area, cathode thickness, electrolyte thickness, anode thickness, and transport properties associated with each region and at interfaces (charge transfer resistance).
Furthermore, it becomes increasingly interconnected as a function of the annealing time.
To further study the scattering mechanism in our device, we investigated temperature-dependent resistance as a function of the electric field E. Shown in Figure 4 are the dimensionless resistance R T /RT = 5K as a function of the electric field E at different temperatures, for (a) tri- and (b) four-layer graphene interconnects.
Analytical expressions are derived for the area-specific resistance (ASR) of a repeat unit consisting of a cell and interconnect, for both geometries, as a function of cell parameters, interconnect contact area and interconnect contact spacing.
This model can solve a thermoelectrically coupled field to analyze resistance variation and Joule heating as a function of electromigration-induced voiding in various interconnect structures.
In Figure 5, we present the electrical resistance of the three and four layers of graphene interconnects as a function of temperature.
Novel algorithms were then applied to quantify both the pore and interconnect size of Ti foams as a function of porosity.
These elements (recti- or curvilinear) are interconnected at nodes, through which energy, mass and stiffness properties of the elements are transmitted as a function of time.
The 3D models are also used to optimize the rib widths in SOFC stacks as a function of interconnect electrode contact resistance.
Deflection signal as a function of degrees.
A different view of the tumour as a functional tissue interconnected with the microenvironment has recently been described [ 1].
