Sentence examples for as a function of the drain from inspiring English sources

In general, the drain current, I D as a function of the drain voltage, V D, and gate voltage, V GS is given as follows: I D = μ eff C G 2 L 2 V G S − V T V D − V D 2 1 + V D / V C (18). for 0 ≤ V D  ≤ V Dsat.

Figure 3a,b, respectively, shows the characteristics of the drain-source current (IDS) as a function of the drain-source voltage (VDS) of the single-gate ZnO MOSFETs and the multiple-gate ZnO MOSFETs measured using an Agilent 4156C semiconductor parameter analyzer (Santa Clara, CA, USA).

Moreover, regardless of the nanowire carrier density, a linear increase of the nanowire current has been observed as a function of the source-drain bias with slopes progressively larger with increasing n-doping concentration.

Based on the 2-D Poisson's solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.

Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the saturation region.

In Fig.  7b the transfer characteristic is plotted, showing ID VG) and IG VG) in a semi-logarithmic representation as well as the square root of the drain current as a function of the gate bias.

Figure 4a shows the drain current (I d) as a function of the gate voltage (V g), for the 90-nm-thick SnSe nanoflake, for the source-drain voltages (V ds) of −30, 0, and 30 V, at room temperature, indicating a clear p-type semiconductor behavior, which is mainly attributed to the Sn vacancies, as reported previously [15, 16, 22, 24, 35 39].

Transconductance (gm), which is defined as the slope of the drain-source current as a function of the gate-source voltage, is an important parameter of MOSFETs.

The distortion characteristics of the device are studied as a function of the gate voltage (Vgs) and the transconductance generation factor (gm/Id) considering the influence of drain current (Id) and the transconductance (gm).

(d) Drain-source current Ids through the MoS2 single-layer transistor measured as a function of the top gate voltage Vtg (upper graph).

Fracture trace length, orientation, and density also play a role, albeit secondary to the distribution of transmissivity, in defining drain length as a function of drain orientation relative to the mean fracture set orientation.