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The variation in the capacitance voltage (C V) and conductance voltage (G V) characteristics of the Al/MPc/n-Si/Al Schottky barrier devices have been systematically investigated as a function of frequencies in the frequency range of 42 Hz 5 MHz at different temperatures in the range of 210 473 K.
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In Figure 3 the phase is pictured as a function of frequency (in Hz).
Global quantities are plotted as a function of frequency in order to obtain response curves, exhibiting several resonance peaks.
Figure 3 Dielectric permittivity of quartz as a function of frequency in frequency ranges 1 to 40 GHz and 140 to 210 GHz.
Therefore, for the fundamental studies of GIE, it is described as a function of frequency in this study.
Figure 2 Typical temperature oscillation δT 2 ω as a function of frequency measured in PVP-stabilized ZnO nanofluid.
The representative data on the detected temperature oscillation δT2ω as a function of frequency is shown in Figure 2.
The variations of dielectric constant as a function of frequency for samples NiFe2O4 are shown in Figure6.
Dielectric constant and dielectric loss frequency of CZ core/shell NPs as a function of frequency range (50 Hz–5 MHz) at room temperature are shown in Fig. 5.
The plot of gain as a function of frequency for different values of plasma density is shown in Fig. 3.
Figure 8 shows the change in dielectric constant as a function of frequency from 0.01 to 105 Hz.
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