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The electrical performance of the fabricated NW arrays was characterized with a standard electrical probe station and Agilent 4155C semiconductor analyzer (Santa Clara, CA, USA).
The crystal phase of ZnO nanowire arrays was characterized by X-ray diffraction (XRD, D/max 2550 V, Cu Kα radiation).
The morphology of the arrays was characterized by SEM and the electrochemical behavior was studied by cyclic voltammetry in potassium ferrocyanide and alkaline solutions.
The surface geometry of the grating arrays was characterized using atomic force microscopy (AFM, CSPM5000, Being Nano-Instrument Ltd., China) and laser scanning confocal microscopy (LSCM, OLS4100, Olympus, Japan).
As is shown in Figure 3, the optical property of the ZnO nanoneedle arrays was characterized by the UV-visible transmittance spectrum in the range of 220 to 800 nm.
And the crystallographic structure of the AgNR arrays was characterized by X-ray diffraction analysis (XRD) using a computer-controlled Rigaku diffractometer with a Cu radiation (λ = 0.15406 nm) running at 40 kV and 40 mA.
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Work parameters of the sensor arrays were characterized.
In order to get strong signals, the high-density VFS PZT NC arrays were characterized.
The nanowire arrays were characterized by XRD, N2adsorption, TEM, and SEM.
The electrochromic properties of Co3O4 nanowall arrays are characterized via optical-electrochemical measurements.
The field emission properties of the coated and uncoated ZnO nanorod arrays were characterized.
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