The phrase "array of dislocations" is correct and usable in written English.
It can be used in contexts discussing physical or metaphorical disruptions, such as in medical, geological, or social discussions.
Example: "The study revealed an array of dislocations in the patient's skeletal structure, indicating a need for immediate intervention."
Alternatives: "variety of dislocations" or "range of dislocations".
The model shows that the major facet near (335 f which appears to be defect free, actually contains a closely spaced array of dislocations in near-screw orientation.
It shows that adding threading dislocations into a parallel array of dislocations at the film substrate interface can contribute significantly to the strain hardening of thin films.
In contrast, at high temperature, the strain is accommodated mostly by a single slip system, forming a parallel array of dislocations.
As an application of this new approach, we examine the interactions of a single dislocation and an array of dislocations with a general bimaterial interface (with and without misfit) as a function of interfacial stiffness.
The curved ∼(443̄ f side facets contained an array of dislocations spaced ∼8.1 nm apart with a Burgers vector that could reasonably be characterized as 1/3[111]f or 1/2[110]b, i.e. as d.s.c.s.c
Figure 6 shows an array of dislocations and stacking faults in a relatively thick graphene flake (>20 layers) prepared by mechanical cleavage.
This paper provides a theoretical and numerical framework to investigate the interactions between domain walls and arrays of dislocations in ferroelectric single crystals.
The strain due to lattice mismatch is relieved immediately at the GaSb/GaAs heterointerface with the help of periodic, pure-edge misfit (IMF) arrays of dislocations along both [110] and [1-10] in the IMF-grown GaSb.
By contrast, the fcc phase accommodated strain in a sequence as follows: (1) slip of dislocations by forming intersecting planar arrays of dislocations, (2) {1 1 1} deformation twinning, and (3) the γ fcc) → ε hcp) martensitic phase transformation.
The interactions between the incident dislocation and the GB dislocations can form an array of 〈1 0 0〉 dislocations (binary junctions) in non-coplanar interactions, or a single 〈1 0 0〉 dislocation in coplanar interaction.
The grain boundary comprises an array of edge dislocations, with the dislocation density increasing upon increasing the grain boundary misorientation angle.
