The phrase "area thin" is not correct and does not convey a clear meaning in written English.
It may be intended to describe a location or region that is sparse or lacking in substance, but it requires additional context to be usable.
Example: "The area thin in vegetation made it difficult for wildlife to thrive."
Alternatives: "sparse area" or "thinly populated region".
These anisotropic high surface area thin films possessed similar channel-like features but different chromatographic properties.
Using this process, the uniformity of large area thin layer can be retained, and the applicability to various substrates can provide great opportunities in the fabrication of various atomically thin layered structures.
To develop an all organic active matrix light emitting display required for large area thin display, electronic paper and electronic paints, Si-based thin film transistor has to be replaced with organic thin film transistor (OTFT).
Pulsed magnetron sputtering has become the leading industrial production process for large area thin film deposition due to its versatility, low environmental impact and ability to provide uniform coatings across large substrate areas.
The TiO2 samples were large surface area thin film electrodes formed either by thermal oxidation of the Ti metal (for the rutile films) or deposited on the same substrate by a sol-gel method (for the anatase films).
The dielectric properties of SAMs based on n-alkyl phosphonic acids in large area thin film devices (organic field-effect transistors with good hole mobilities up to 0.3 cm2 V−1 s−1 at −1 V and capacitors) depend on their chain length, but not consistently to theoretical pictures of tunneling through saturated n-alkanes.
The processing options and mechanical compliance of the elastomeric substrate combined with organic device materials open new opportunities for compliant, lightweight, low-power and large area thin-film circuitry.
All these applications exploit the ability of amorphous silicon to be vapour-deposited in the form of large-area thin films.
Large-area thin films with fine nanostructure were successfully prepared using the designed electrochemical molds and containers.
The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.
Herein, we engineer the surface structure of MoS(2) to preferentially expose edge sites to effect improved catalysis by successfully synthesizing contiguous large-area thin films of a highly ordered double-gyroid MoS(2) bicontinuous network with nanoscaled pores.
